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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA473 DESCRIPTION *With TO-220 package *Complement to type 2SC1173 *Collector current :IC=-3A *Collector dissipation:PC=10W@TC=25 APPLICATIONS *Low frequency power amplifier *Power regulator PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -30 -30 -5 -3 10 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-0.5mA ;IE=0 IE=-1mA ;IC=0 IC=-2A; IB=-0.2A IC=-0.5A ; VCE=-2V VCB=-20V;IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-2.5A ; VCE=-2V IE=0; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-2V 70 25 40 100 MIN -30 -30 -5 TYP. 2SA473 MAX UNIT V V V -0.8 -1.0 -1.0 -1.0 240 V V A A pF MHz hFE-1 classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA473 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA473 4 |
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